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Transistor Polarity: N Channel
DC Collector Current: 150A
Collector Emitter Saturation Voltage Vce(on): 2.2V
Power Dissipation Pd: 540W
Collector Emitter Voltage V(br)ceo: 1.2kV
Transistor Case Style: Module No. of Pins: 7Pins
Operating Temperature Max: 125°C
Product Range: –
SVHC: To Be Advised
The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor 1200V collector-emitter voltage and 540W collector power dissipation.