Electronic

Hitachi PM45502C New Stock

Hitachi PM45502C New Stock Hitachi PM45502C New Stock Hitachi PM45502C New Stock Hitachi PM45502C New Stock Hitachi PM45502C New Stock Hitachi PM45502C New Stock

#PM45502C Hitachi PM45502C New Hitachi IGBT Module 2MOS: 50A / 300V /450V, PM45502C pictures, PM45502C price, #PM45502C supplier
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PM45502C Description

PM45502C Mitsubishi power module

PM45502C  0.66 lbs

Target_Applications

PM45502C could be used in High Speed Power Switching

Features

Absolute Maxinun Ratings((Tc=25°C)(Per FET chip)
Drain source voltage 450 V
Gate source voltage ±20 V
Drain current ID 50 A
Drain peak current ID(peak) 100 A
Chammel disssipation 300 W
Channel temperature Tch 150 °C
Storage temperature Tstg -45~125 °C
Insulation dielectric Visol*2 2000 V

Hitachi IGBT Module 2MOS: 50A / 300V /450V

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