#PM45502C Hitachi PM45502C New Hitachi IGBT Module 2MOS: 50A / 300V /450V, PM45502C pictures, PM45502C price, #PM45502C supplier
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Email: [email protected]
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Email: [email protected]
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PM45502C Description
PM45502C Mitsubishi power module
PM45502C 0.66 lbs
Target_Applications
PM45502C could be used in High Speed Power Switching
Features
Absolute Maxinun Ratings((Tc=25°C)(Per FET chip)
Drain source voltage 450 V
Gate source voltage ±20 V
Drain current ID 50 A
Drain peak current ID(peak) 100 A
Chammel disssipation 300 W
Channel temperature Tch 150 °C
Storage temperature Tstg -45~125 °C
Insulation dielectric Visol*2 2000 V
Drain source voltage 450 V
Gate source voltage ±20 V
Drain current ID 50 A
Drain peak current ID(peak) 100 A
Chammel disssipation 300 W
Channel temperature Tch 150 °C
Storage temperature Tstg -45~125 °C
Insulation dielectric Visol*2 2000 V
Hitachi IGBT Module 2MOS: 50A / 300V /450V
