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QM150DY-HK Description
IGBT Power Transistor Modules 150A/600V/GTR/2U QM150DY-HK
• VCEX Collector-emitter voltage ……….. 1200V
• hFE DC current gain…………………………. 75
• Insulated Type
• UL Recognized
• Isolation voltage Charged part to case, AC for 1 minute 2500V
• Junction temperature Tj ……………….+150°C
• Typical value Weight …………………470g
MITSUBISHI Power Transistor ModuleS HIGH POWER SWITCHING USE INSULATED TYPE 100 Amp 1200 Vol