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Email: [email protected]
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SKM200GB125D Features:
.N channel , homogeneous Si
.Low inductance case
.Short tail current with low temperature dependence
.High short circuit capability, self limiting to 6 x I cnom
.Fast & soft inverse CAL diodes
.Isolated copper baseplate using DCB Direct Copper Bonding Technology
.Large clearance (13 mm) and creepage distance (20 mm)
Typical Applications:
.Switched mode power supplies at f sw > 20 kHz
.Resonant inverters up to 100 kHz Inductive heating
.Electronic welders at f sw > 20 kHz
IGBT Array & Module Transistor Dual N Channel 200 A 3.3 V 1.2 kV Module.