#MG100Q2YS42 Toshiba MG100Q2YS42 New High Power Switching Applications Motor Control Applications 2IGBT: 100A,1200V, MG100Q2YS42 pictures, MG100Q2YS42 price, #MG100Q2YS42 supplier
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Email: [email protected]
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Email: [email protected]
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MG100Q2YS42 Description
High Power Switching Applications Motor Control Applications
.High input impedance
.High speed : tf = 0.5µs (Max)
trr = 0.5µs (Max)
.Low saturation voltage: VCE (sat) = 4.0V (Max)
.Enhancement-mode
.Includes a complete half bridge in one package.
.The electrodes are isolated from case.
Collector-emitter voltage VCES 1200 V
Collector-emitter voltage VCES 1200 V
Gate-emitter voltage VGES ±20 V
Collector current DC IC 100 A
Collector current 1ms ICP 200 A
Forward current DC IF 100 A
Forward current 1ms IFM 200 A
Collector current DC IC 100 A
Collector current 1ms ICP 200 A
Forward current DC IF 100 A
Forward current 1ms IFM 200 A
Collector power dissipation (Tc = 25°C) PC 700 W
Junction temperature Tj 150 °C
Storage temperature range Tstg −40 ~ 125 °C
Isolation voltage VIsol (AC 1 min.) 2500 V
Screw torque (Terminal / mounting) 3 / 3 N·m
Gate leakage current IGES VGE = ±20V, VCE = 0 ±20 µA
Collector cut-off current ICES VCE = 1200V, VGE = 0 2.0 mA
Gate-emitter cut-off voltage VGE (off) IC = 100mA ,VCE = 5V 3.0 6.0 V
Collector-emitter saturation voltage VCE (sat) IC = 100A, VGE = 15V 3.0 4.0 V
High Power Switching Applications Motor Control Applications 2IGBT: 100A,1200V
